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2SC2712_07 [BL Galaxy Electrical]

Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
2SC2712_07
型号： 2SC2712_07
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

Silicon Epitaxial Planar Transistor
硅外延平面晶体管

晶体 晶体管
文件： 总4页 (文件大小：163K)
中文：  中文翻译
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BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC2712  
FEATURES  
Pb  
Lead-free  
z
z
z
z
Low noise：NF=1dB (Typ.),10 dB(Max).  
Complementary to 2SA1162.  
High voltage and high current.  
High hFE linearity.  
APPLICATIONS  
z
Audio frequency general purpose amplifier applications.  
SOT-23  
ORDERING INFORMATION  
Type No.  
2SC2712  
Marking  
Package Code  
SOT-23  
LO▪/LY▪/LG▪/LL▪  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
VCBO  
60  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
50  
V
5
V
Collector Current -Continuous  
Collector Dissipation  
150  
150  
-55~125  
mA  
mW  
℃
PC  
Junction and Storage Temperature  
Tj,Tstg  
Document number: BL/SSSTC021  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC2712  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol  
Test conditions  
MIN  
60  
50  
5
TYP MAX UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100μA,IE=0  
IC=0.1mA,IB=0  
IE=100μA,IC=0  
VCB=60V,IE=0  
VEB=5V,IC=0  
V
V
V
Collector-emitter breakdown  
voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
0.1  
μA  
μA  
Emitter cut-off current  
DC current gain  
IEBO  
0.1  
hFE  
VCE=6V,IC=2mA  
70  
80  
700  
0.25  
Collector-emitter saturation  
voltage  
IC=100mA, IB=10mA  
VCE(sat)  
0.1  
V
Transition frequency  
Output capacitance  
Noise Figure  
VCE=10V, IC= 1mA  
fT  
MHz  
pF  
VCB=10V, IE=0,f=1kHz  
VCE=6V,IC=0.1mA,f=1kHz  
Cob  
NF  
2.0  
1.0  
3.5  
10  
dB  
CLASSIFICATION OF hFE(1)  
Rank  
Range  
Marking  
O
Y
GR  
200-400  
LG·  
BL  
70-140  
LO·  
120-240  
LY·  
350-700  
LL·  
Document number: BL/SSSTC021  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC2712  
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTC021  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC2712  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
SOT-23  
Dim  
A
Min  
2.85  
1.25  
Max  
2.95  
1.35  
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
G
H
J
0.1Typical  
K
2.35  
2.45  
All Dimensions in mm  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
2SC2712  
3000/Tape&Reel  
Document number: BL/SSSTC021  
Rev.A  
www.galaxycn.com  
4

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